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©

1998,2000
MOS FIELD EFFECT TRANSISTOR
2SK3305
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14003EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3305 is N-Channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
• Low gate charge:
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 500 V
Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±30 V
Drain Current (DC) ID(DC) ±5A
Drain Current (pulse)
Note1
ID(pulse) ±20 A
Total Power Dissipation (TC = 25°C) PT 75 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 5.0 A
Single Avalanche Energy
Note2
EAS 125 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V a161 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3305 TO-220AB
2SK3305-S TO-262
2SK3305-ZJ TO-263
(TO-220AB)
(TO-262)
(TO-263)