2SK3288
器件描述：Silicon N Channel MOS FET High Speed Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：39.3KB，共8页
Sponsor by e络盟器件资料摘要：
2SK3288
Silicon N Channel MOS FET
High Speed Switching
ADE-208-803 (Z)
1st.Edition.
June 1999
Features
• Low on-resistance
R
DS
= 2.7 W typ. (V
GS
= 10 V , I
D
= 50 mA)
R
DS
= 4.7 W typ. (V
GS
= 4 V , I
D
= 20 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
1
2
3
1. Source
2. Gate
3. Drain
MPAK
D
S
G
Silicon N Channel MOS FET
High Speed Switching
ADE-208-803 (Z)
1st.Edition.
June 1999
Features
• Low on-resistance
R
DS
= 2.7 W typ. (V
GS
= 10 V , I
D
= 50 mA)
R
DS
= 4.7 W typ. (V
GS
= 4 V , I
D
= 20 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
1
2
3
1. Source
2. Gate
3. Drain
MPAK
D
S
G