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©

1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3298
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D14059EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
Printed in Japan
DATA SHEET
The mark a35 shows major revised points.
DESCRIPTION
The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 4.0 A)
•Avalanche capability ratings
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 600 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TC = 25°C) ID(DC) ±7.5 A
Drain Current (Pulse)
Note1
ID(pulse) ±30 A
Total Power Dissipation (TA = 25°C) PT1 2.0 W
Total Power Dissipation (TC = 25°C) PT2 40 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS 7.5 A
Single Avalanche Energy
Note2
EAS 37.5 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3298 Isolated TO-220