2SK3265
2002-06-05 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3265

Chopper Regulators DC−DC Converter, and Motor Drive
Applications


G6cG20Low drain−source ON resistance : R
DS (ON)
= 0.72 Ω (typ.)
G6cG20High forward transfer admittance : |Y
fs
| = 7.0 S (typ.)
G6cG20Low leakage current : I
DSS
= 100 µA (max) (V
DS
= 700 V)
G6cG20Enhancement−mode : V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage V
DSS
700 V
Drain−gate voltage (R
GS
= 20 kΩ) V
DGR
700 V
Gate−source voltage V
GSS
±30 V
DC (Note 1) I
D
10 A
Drain current
Pulse (Note 1) I
DP
30 A
Drain power dissipation P
D
45 W
Single pulse avalanche energy
(Note 2)
E
AS
420 mJ
Avalanche current I
AR
10 A
Repetitive avalanche energy (Note 3) E
AR
4.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch−c)
2.78 °C / W
Thermal resistance, channel to
ambient
R
th (ch−a)
62.5 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 7.5 mH, R
G
= 25 Ω, I
AR
= 10 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.

Unit: mm


JEDEC —
JEITA SC-67
TOSHIBA 2-10R1B
Weight: 1.9 g (typ.)