2SK3290
器件描述：Silicon N Channel MOS FET High Speed Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：39.5KB，共8页
Sponsor by e络盟器件资料摘要：
2SK3290
Silicon N Channel MOS FET
High Speed Switching
ADE-208-744 C (Z)
4th.Edition.
June 1999
Features
• Low on-resistance
R
DS
= 0.455 W typ. (V
GS
= 10 V , I
D
= 250 mA)
R
DS
= 0.9 W typ. (V
GS
= 4 V , I
D
= 100 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
1
2
3
1. Source
2. Gate
3. Drain
MPAK
D
S
G
Silicon N Channel MOS FET
High Speed Switching
ADE-208-744 C (Z)
4th.Edition.
June 1999
Features
• Low on-resistance
R
DS
= 0.455 W typ. (V
GS
= 10 V , I
D
= 250 mA)
R
DS
= 0.9 W typ. (V
GS
= 4 V , I
D
= 100 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
1
2
3
1. Source
2. Gate
3. Drain
MPAK
D
S
G