1
Item Symbol Rating Unit
Drain-source voltage VDS 200
Continuous drain current ID ±20
Pulsed drain current ID(puls] ±80
Gate-source voltage VGS ±20
Maximum Avalanche Energy EAV *1 355
Max. power dissipation Ta=25
°C
PD 2
Tc=25
°C
PD 45
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3262-01MR FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=200V
VGS=±20V
ID=10A VGS=4V
ID=10A VGS=10V
ID=10A VDS=25V
VCC=100V ID=20A
VGS=10V
RGS=10 W
Min. Typ. Max. Units
V
V
µA
mA
nA
mW
S
pF
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
2.78
62.5
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100µH Tch=25°C
IF=20A VGS=0V Tch=25°C
IF=20A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
mJ
W
W
°C
°C
*1 L=1.6mH, Vcc=24V
200
1.0 1.5 2.0
10 500
0.2 0.5
10 100
110 150
85 100
9.0 19.0
1700 2550
290 435
185 280
10 15
45 70
225 340
120 180
20
0.93 1.40
250
2.90
-55 to +150
TO-220F15
3. Source
2.54