2SK3229
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：26.45KB，共5页
Sponsor by e络盟器件资料摘要：
2SK3229
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-766(Z)
Target specification
1st. Edition
December 1998
Features
• Low on-resistance
R
DS(on)
=6mW typ.
• Low drive current
• 4V gate drive device can be driven from 5V source
Outline
1
2
3
1. Gate
2. Drain
3. Source
TO–220CFM
D
G
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-766(Z)
Target specification
1st. Edition
December 1998
Features
• Low on-resistance
R
DS(on)
=6mW typ.
• Low drive current
• 4V gate drive device can be driven from 5V source
Outline
1
2
3
1. Gate
2. Drain
3. Source
TO–220CFM
D
G
S