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©

1998
MOS FIELD EFFECT TRANSISTOR
2SK3221
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D13789EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3221 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
• Low gate charge
QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
• Avalanche capability ratings
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 600 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TC = 25°C) ID(DC) ±2.0 A
Drain Current (pulse)
Note1
ID(pulse) ±8.0 A
Total Power Dissipation (TA = 25°C) PT1 2.0 W
Total Power Dissipation (TC = 25°C) PT2 25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 2.0 A
Single Avalanche Energy
Note2
EAS 2.7 mJ
Diode Recovery dv/dt
Note3
dv/dt 3.5 V/ns
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 a161 0 V
3. IF ≤ 1.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3211 Isolated TO-220