1
Item Symbol Rating Unit
Drain-source voltage VDS 100
Continuous drain current ID ±50
Pulsed drain current ID(puls] ±200
Gate-source voltage VGS ±30
Maximum Avalanche Energy EAV *1 464
Max. power dissipation Ta=25
°C
PD 1.67
Tc=25
°C
PD 135
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3216-01 FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=100V
VGS=±30V
ID=25A VGS=10V
ID=25A VDS=25V
VCC=48V ID=50A
VGS=10V
RGS=10 W
Min. Typ. Max. Units
V
V
µA
mA
nA
mW
S
pF
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
0.93
75.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
mJ
W
W
°C
°C
*1 L=298µH, Vcc=24V
100
2.5 3.0 3.5
1 100
0.1 0.5
10 100
20 25
16.0 32.0
3200 4800
760 1140
230 345
23 35
130 195
110 165
65 100
50
0.97 1.46
150
0.80
-55 to +150
TO-220AB
3. Source