2SK3163
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：48.56KB，共10页
Sponsor by e络盟器件资料摘要：
2SK3163
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-736A (Z)
2nd Edition
February 1999
Features
• Low on-resistance
R
DS(on)
= 6 mW typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–3P
1. Gate
2. Drain
(Flange)
3. Source
1
2
3
D
S
G
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-736A (Z)
2nd Edition
February 1999
Features
• Low on-resistance
R
DS(on)
= 6 mW typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–3P
1. Gate
2. Drain
(Flange)
3. Source
1
2
3
D
S
G