©

1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SK3204
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13796EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP (K)
Printed in Japan
DATA SHEET
The mark  shows major revised points.
DESCRIPTION
The 2SK3204 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance :
RDS(on)1 = 34 mΩ (MAX.) (VGS = 10 V, ID = 8 A)
RDS(on)2 = 50 mΩ (MAX.) (VGS = 4 V, ID = 8 A)
• Low Ciss : Ciss = 940 pF (TYP.)
• Built-in gate protection diode.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Gate to Source Voltage VGSS(DC) +20, −10 V
Drain Current (DC) ID(DC) ±15 A
Drain Current (pulse)
Note1
ID(pulse) ±45 A
Total Power Dissipation (TA = 25 °C) PT 1.8 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS 15 A
Single Avalanche Energy
Note2
EAS 22.5 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 V
THERMAL RESISTANCE
Channel to Ambient Rth(ch-A) 69.4 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3204 MP-10
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