2SK3157
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：51.62KB，共9页
Sponsor by e络盟器件资料摘要：
2SK3157
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-769A (Z)
2nd. Edition
Februaty 1999
Features
• Low on-resistance
R
DS
= 50 mW typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
1
2
3
TO–220FM
1. Gate
2. Drain
3. Source
D
G
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-769A (Z)
2nd. Edition
Februaty 1999
Features
• Low on-resistance
R
DS
= 50 mW typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
1
2
3
TO–220FM
1. Gate
2. Drain
3. Source
D
G
S