2SK3147S
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：54.02KB，共9页
Sponsor by e络盟器件资料摘要：
2SK3147(L),2SK3147(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-731 (Z)
1st. Edition
February 1999
Features
• Low on-resistance
R
DS
= 0.1 W typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
1
2
3
D
G
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-731 (Z)
1st. Edition
February 1999
Features
• Low on-resistance
R
DS
= 0.1 W typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
1
2
3
D
G
S