2SK3135L
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：53.95KB，共10页
Sponsor by e络盟器件资料摘要：
2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-695B (Z)
3rd. Edition
February 1999
Features
• Low on-resistance
R
DS(on)
= 6 mW typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
1
2
3
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-695B (Z)
3rd. Edition
February 1999
Features
• Low on-resistance
R
DS(on)
= 6 mW typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
1
2
3