1
Power F-MOS FETs
unit: mm
2SK3124
Silicon N-Channel Power F-MOS FET
n Features
l Avalanche energy capacity guaranteed
l High-speed switching
l No secondary breakdown
l High electrostatic breakdown voltage
n Applications
l High-speed switching (switching power supply)
l For high-frequency power amplification
n Electrical Characteristics (T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 320V, V
GS
= 0
V
GS
= ±20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 0.1A
V
DS
= 10V, I
D
= 0.1A
I
DR
= 0.1A, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DD
= 100V, I
D
= 0.1A
V
GS
= 10V, R
L
= 1W
min
400
1
100
typ
17
160
48
10
5
65
35
40
70
max
10
±1
3
23
- 1.5
12.5
125
Unit
m A
m A
V
V
W
mS
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
n Absolute Maximum Ratings (T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
400
±20
±0.5
±1
0.25
10
1
150
- 55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 2mH, I
L
= 0.5A, 1 pulse
1: Gate
2: Drain
3: Source
U Type Package
6.5±0.1
5.3±0.1
4.35±0.1
4.6±0.1
2.3±0.1
0.75±0.1
123
0.93±0.1
2.5±0.1
0.8max
1.0±0.2
7.3±0.1
1.8±0.1
2.3±0.1
0.5±0.1
0.5±0.1
0.1±0.05
1.0±0.1