©

1998
MOS FIELD EFFECT TRANSISTOR
2SK3114
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D13337EJ2V0DS00 (2nd edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark a35 shows major revised points.
DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•Low on-state resistance:
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A)
•Low gate charge:
QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)
•Gate voltage rating: ±30 V
•Avalanche capability ratings
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 600 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TC = 25°C) ID(DC) ±4.0 A
Drain Current (pulse)
Note1
ID(pulse) ±16 A
Total Power Dissipation (TC = 25°C) PT1 30 W
Total Power Dissipation (TA = 25°C) PT2 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 4.0 A
Single Avalanche Energy
Note2
EAS 10.7 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3114 Isolated TO-220
a35 (Isolated TO-220)