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©

1998, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3109
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13332EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
DATA SHEET
The mark a35 shows major revised points.
DESCRIPTION
The 2SK3109 is N channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter.
FEATURES
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 5.0 A)
• Low input capacitance
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to source voltage (VGS = 0 V) VDSS 200 V
Gate to source voltage (VDS = 0 V) VGSS ±30 V
Drain current (DC) (TC = 25 °C) ID(DC) ±10 A
Drain current (pulse)
Note1
ID(pulse) ±30 A
Total power dissipation (TA = 25 °C) PT1 1.5 W
Total power dissipation (TC = 25 °C) PT2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to +150 °C
Single avalanche current
Note2
IAS 10 A
Single avalanche energy
Note2
EAS 35 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3109 TO-220AB
2SK3109-S TO-262
2SK3109-ZJ TO-263