2SK3081
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：50.16KB，共9页
Sponsor by e络盟器件资料摘要：
2SK3081
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-636A (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 10mW typ.
• 4V gate drive devices.
• High speed switching
Outline
TO–220AB
1
2
3
1. Gate
2. Drain(Flange)
3. Source
D
G
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-636A (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 10mW typ.
• 4V gate drive devices.
• High speed switching
Outline
TO–220AB
1
2
3
1. Gate
2. Drain(Flange)
3. Source
D
G
S