2SK3072
器件描述：Ultrahigh-Speed Switching Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：26.95KB，共4页
Sponsor by e络盟器件资料摘要：
2SK3072
No.7224-1/4
Features
•
Ultrahigh-speed switching.
•
Low-voltage drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
450 V
Gate-to-Source Voltage V
GSS
±10 V
Drain Current (DC) I
D
30 mA
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% 120 mA
Allowable Power Dissipation P
D
250 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=300µA, V
GS
=0 450 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=360V, V
GS
=0 10 µA
Gate-to-Source Leakage Current I
GSS
V
GS
=±10V, V
DS
=0 ±10 µA
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=1mA 1.0 2.0 V
Forward Transfer Admittance
yfs
V
DS
=10V, I
D
=15mA 14 28 mS
Static Drain-to-Source On-State Resistance
R
DS
(on)1 I
D
=15mA, V
GS
=10V 210 275 Ω
R
DS
(on)2 I
D
=15mA, V
GS
=4V 230 300 Ω
Input Capacitance Ciss V
DS
=20V, f=1MHz 20 pF
Output Capacitance Coss V
DS
=20V, f=1MHz 5 pF
Reverse Transfer Capacitance Crss V
DS
=20V, f=1MHz 3 pF
Marking : HK Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7224
2SK3072
Package Dimensions
unit : mm
2091A
[2SK3072]
80902 TS IM TA-1670
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Source
3 : Drain
SANYO : CP
0.4
0.95 0.95
1.9
2.9
0.5
1.5 2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
No.7224-1/4
Features
•
Ultrahigh-speed switching.
•
Low-voltage drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
450 V
Gate-to-Source Voltage V
GSS
±10 V
Drain Current (DC) I
D
30 mA
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% 120 mA
Allowable Power Dissipation P
D
250 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=300µA, V
GS
=0 450 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=360V, V
GS
=0 10 µA
Gate-to-Source Leakage Current I
GSS
V
GS
=±10V, V
DS
=0 ±10 µA
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=1mA 1.0 2.0 V
Forward Transfer Admittance
yfs
V
DS
=10V, I
D
=15mA 14 28 mS
Static Drain-to-Source On-State Resistance
R
DS
(on)1 I
D
=15mA, V
GS
=10V 210 275 Ω
R
DS
(on)2 I
D
=15mA, V
GS
=4V 230 300 Ω
Input Capacitance Ciss V
DS
=20V, f=1MHz 20 pF
Output Capacitance Coss V
DS
=20V, f=1MHz 5 pF
Reverse Transfer Capacitance Crss V
DS
=20V, f=1MHz 3 pF
Marking : HK Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7224
2SK3072
Package Dimensions
unit : mm
2091A
[2SK3072]
80902 TS IM TA-1670
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Source
3 : Drain
SANYO : CP
0.4
0.95 0.95
1.9
2.9
0.5
1.5 2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1