2SK3070
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：54.47KB，共10页
Sponsor by e络盟器件资料摘要：
2SK3070(L),2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-684G (Z)
8th. Edition
February 1999
Features
• Low on-resistance
R
DS(on)
= 4.5 mW typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-684G (Z)
8th. Edition
February 1999
Features
• Low on-resistance
R
DS(on)
= 4.5 mW typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S