2SK3067
2002-06-05 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3067

Chopper Regulator, DC−DC Converter and Motor Drive
Applications


G6cG20Low drain−source ON resistance : R
DS (ON)
= 4.2 Ω (typ.)
G6cG20High forward transfer admittance : |Y
fs
| = 1.7 S (typ.)
G6cG20Low leakage current : I
DSS
= 100 µA (max) (V
DS
= 600 V)
G6cG20Enhancement−mode : V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage V
DSS
600 V
Drain−gate voltage (R
GS
= 20 kΩ) V
DGR
600 V
Gate−source voltage V
GSS
±30 V
DC (Note 1) I
D
2 A
Pulse (t = 1 ms)
(Note 1)
I
DP
5 A
Drain current
Pulse (t = 100 µs)
(Note 1)
I
DP
8 A
Drain power dissipation P
D
25 W
Single pulse avalanche energy
(Note 2)
E
AS
93 mJ
Avalanche current I
AR
2 A
Repetitive avalanche energy (Note 3) E
AR
2.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C

Electrical Characteristics (Tc = 25°C)
Characteristics Symbol Max Unit
Thermal reverse, channel to case R
th (ch−c)
5.0 °C / W
Thermal reverse, channel to ambient R
th (ch−a)
62.5 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 41 mH, R
G
= 25 Ω, I
AR
= 2 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm



JEDEC —
JEITA SC-67
TOSHIBA 2-10R1B
Weight: 1.9 g (typ.)