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©

1998
MOS FIELD EFFECT TRANSISTOR
2SK3057
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D13096EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching application.
FEATURES
• Low on-state resistance
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A)
RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A)
• Low Ciss: Ciss = 2100 pF TYP.
• Built-in gate protection diode
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Gate to Source Voltage VGSS(DC) +20, –10 V
Drain Current (DC) ID(DC) ±45 A
Drain Current (pulse)
Note1
ID(pulse) ±150 A
Total Power Dissipation (Tc = 25°C) PT 30 W
Total Power Dissipation (Ta = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 22.5 A
Single Avalanche Energy
Note2
EAS 50.6 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0
THERMAL RESISTANCE
Channel to Case Rth(ch-c) 4.17 °C/W
Channel to Ambient Rth(ch-a) 62.5 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3057 Isolated TO-220