©

1998,1999
MOS FIELD EFFECT TRANSISTOR
2SK3056
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D13095EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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availability and additional information.
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-State Resistance
RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A)
• Low Ciss : Ciss = 920 pF TYP.
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V
Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, −10 V
Drain Current (DC) ID(DC) ±32 A
Drain Current (Pulse)
Note1
ID(pulse) ±100 A
Total Power Dissipation (TC = 25°C) PT 34 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 16 A
Single Avalanche Energy
Note2
EAS 25.6 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case Rth(ch-C) 3.68 °C/W
Channel to Ambient Rth(ch-A) 83.3 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3056 TO-220AB
2SK3056-S TO-262
2SK3056-ZJ TO-263