1
Power F-MOS FETs
unit: mm
2SK3048
Silicon N-Channel Power F-MOS FET
n Features
l Avalanche energy capacity guaranteed
l High-speed switching
l Low ON-resistance
l No secondary breakdown
n Applications
l Contactless relay
l Diving circuit for a solenoid
l Driving circuit for a motor
l Control equipment
l Switching power supply
n Electrical Characteristics (T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
DS
= 480V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
DS
= 25V, I
D
= 2A
I
DR
= 3A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
DD
= 200V, I
D
= 2A
V
GS
= 10V, R
L
= 100W
min
600
2
1.5
typ
1.7
2.5
750
80
25
15
25
90
40
max
100
±1
5
2.5
- 1.5
Unit
m A
m A
V
V
W
S
V
pF
pF
pF
ns
ns
ns
ns
n Absolute Maximum Ratings (T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
600
±30
±3
±6
22.5
35
2
150
- 55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 5mH, I
L
= 3A, 1 pulse
1
9.9±0.3
15.0±0.5
13.7±0.2
4.2±0.2
4.6±0.2
2.9±0.2
0.8±0.1
1.4±0.2
23
f 3.2±0.1
2.6±0.1
0.55±0.15
2.54±0.3
5.08±0.5
3.0±0.5
1.6±0.2
1: Gate
2: Drain
3: Source
TO-220D Package