2SK3019
Transistor
Rev.A 1/4
Small switching (30V, 0.1A)
2SK3019


zApplications
Interfacing, switching (30V, 100mA)


zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.


zStructure
Silicon N-channel
MOSFET
zExternal dimensions (Unit : mm)
0~0.1
0.1Min
±
0.8
±
0.1
0.7±0.1
0.1±0.55
0.15±0.05
0.3
1.6±0.2
1.0±0.1
0.5
(1)
0.5
+0.1
−0.05
(2)(1)
1.6
0.1
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
Abbreviated symbol : KN
(2)
(3)
(1) Source
(2) Gate
(3) Drain



zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation (Tc=25°C)
Channel temperature
Storage temperature
VDSS
VGSS
PD
∗
2
Tch
30 V
V
mA
mW
°C
±20
±100ID
IDP
∗
1
Continuous
Pulsed mA±400
150
150
Tstg °C−55 to +150
Symbol Limits Unit
∗1 Pw≤10µs, Duty cycle≤50%
∗2 With each pin mounted on the recommended lands.





zEquivalent circuit
Drain
Source
Gate
∗ Gate
Protection
Diode
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.