2SK30
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：52.09KB，共10页
Sponsor by e络盟器件资料摘要：
2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-694I (Z)
10th. Edition
February 1999
Features
• Low on-resistance
R
DS(on)
= 6 mW typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
1
2
3
1. Gate
2. Drain(Flange)
3. Source
D
G
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-694I (Z)
10th. Edition
February 1999
Features
• Low on-resistance
R
DS(on)
= 6 mW typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
1
2
3
1. Gate
2. Drain(Flange)
3. Source
D
G
S