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©

1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SK3058
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D13097EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP(K)
Printed in Japan
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super Low On-State Resistance
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A)
RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A)
• Low Ciss : Ciss = 2100 pF (TYP.)
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0) VDSS 60 V
Gate to Source Voltage (VDS = 0) VGSS(AC) ±20 V
Gate to Source Voltage (VDS = 0) VGSS(DC) +20, –10 V
Drain Current (DC) ID(DC) ±55 A
Drain Current (Pulse)
Note1
ID(pulse) ±165 A
Total Power Dissipation (TC = 25°C) PT 58 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to + 150 °C
Single Avalanche Current
Note2
IAS 27.5 A
Single Avalanche Energy
Note2
EAS 75.6 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
THERMAL RESISTANCE
Channel to Case Rth(ch-C) 2.16 °C/W
Channel to Ambient Rth(ch-A) 83.3 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3058 TO-220AB
2SK3058-S TO-262
2SK3058-ZJ TO-263