The information in this document is subject to change without notice.
©

1998
MOS FIELD EFFECT TRANSISTOR
2SK2983
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D12357EJ1V0DS00 (1st edition)
Date Published October 1998 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
FEATURES
• Low on-resistance
RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A)
RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
• Low Ciss Ciss = 1200 pF TYP.
• Built-in gate protection diode
ORDERING INFOMATION
PART NUMBER PACKAGE
2SK2983 TO-220AB
2SK2983-S TO-262
2SK2983-ZJ TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
Note1
VDSS 30 V
Gate to Source Voltage
Note2
VGSS ±20 V
Drain Current (DC) ID(DC) ±30 A
Drain Current (pulse)
Note3
ID(pulse) ±120 A
Total Power Dissipation (TA = 25°C) PT 1.5 W
Total Power Dissipation (TC = 25°C) PT 50 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes1. VGS = 0 V
2. VDS = 0 V
3. PW ≤ 10 µ s, Duty Cycle ≤ 1 %
.