The information in this document is subject to change without notice.
©

1998
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D12355EJ1V0DS00 (1st edition)
Date Published December 1998 NS CP(K)
Printed in Japan
PACKAGE DRAWING (Unit : mm)
TO-251(MP-3)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
0.6 ±0.1
0.6 ±0.1
1.3 MAX.
1.6 ±0.2
123
5.5 ±0.2
7.0
MIN. 13.7
MIN.
2.3 2.3
0.75
4
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
4.3
MAX.
1.3 MAX.
2.3 2.3
12 3
4
5.5 ±0.2
10.0 MAX.
1.5
+0.2 –0.1
1.5
+0.2 –0.1
0.9
MAX.
0.8
MAX.
0.8
0.5
0.8
12.0 MIN.
1.0
MIN.
1.5
TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-252(MP-3Z) (SURFACE MOUNT TYPE)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-resistance
RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A)
RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A)
RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A)
• Low Ciss : Ciss = 860 pF (TYP.)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK2981 TO-251
2SK2981-Z TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0) VDSS 30 V
Gate to Source Voltage (VDS = 0) VGSS ±20 V
Drain Current (DC) ID(DC) ±20 A
Drain Current (Pulse)
Note
ID(pulse) ±80 A
Total Power Dissipation (Tc = 25 °C) PT 20 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to + 150 °C
Note PW ≤ 10 µs, Duty cycle ≤ 1 %
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.