2SK2975
MITSUBISHI RF POWER MOS FET
Nov. ´97
DESCRIPTION
2SK2975 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
FEATURES
• High power gain:Gpe≥8.4dB
@VDD=9.6V,f=450MHz,Pin=30dBm
• High efficiency:55% typ.
• Source case type seramic package
(connected internally to source)
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
Typ MaxMin
LimitsParameter Test conditions
Symbol Parameter Ratings
175
VDSS
VGSS
Pch
Tj
Tstg
Unit
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
30
±20
10
-40 to +110
V
V
W
˚C
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)
Symbol Unit
IDSS
IGSS
VTH
Ciss
Coss
hD
Pout
Threshold voltage
Note: Above parameters,ratings,limits and conditions are subject to change.
VDS=17V, VGS=0V
55
10
1
1.7
µA
µA
V
%
1.0
Note1: Above parameters are guaranteed independently.
VGS=10V, VDS=0V
VDS=7V, IDS=1mA
VGS=10V, VDS=0V,f=1MHz
VDS=10V, VGS=0V,f=1MHz
VDS=9.6V, Pin=1W,f=450MHz 750 8
80
45 pF
pF
W
Conditions
Tc=25˚C (Note2)
˚C
2: Solder source pad on Copper Block(14×2.8×2mm)
OUTLINE DRAWING Dimensions in mm
1 : DRAIN
2 : SOURCE
3 : GATE
MARKING
23
3.50
1
t=1.2MAX
(BOTTOM)(TOP)
4.9
INDEX MARK
2.0
LOT No.
TYPE No.
INDEX
MARK