2SK2957L
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：50.79KB，共9页
Sponsor by e络盟器件资料摘要：
2SK2957(L),2SK2957(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-567D (Z)
5th. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 7mW typ.
• 4V gate drive devices.
• High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-567D (Z)
5th. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 7mW typ.
• 4V gate drive devices.
• High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S