© 1997
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2941
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D11007EJ1V0DS00 (1st edition)
Date Published May 1997 N
The information in this document is subject to change without notice.
DESCRIPTION
This product is n-Chanel MOS Field Effect Transistor designed high
current switching application.
FEATURE
• Low On-Resistance
RDS(on)1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A)
RDS(on)2 = 22 mΩ Typ. (VGS = 4 V, ID = 18 A)
• Low Ciss Ciss = 1250 pF Typ.
• Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Maximum Voltages and Currents
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±35 A
Drain Current (Pulse)* ID(Pulse) ±140 A
Maximum Power Dissipation
Total Power Dissipation (TA = 25 ˚C) PT 1.5 W
Total Power Dissipation (TC = 25 ˚C) PT 60 W
Maximum Temperature
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to + 125 ˚C
* PW ≤ 10 µs, Duty Cycle ≤ 1%
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device
acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to
this device.
123
4
10.6 MAX.
10.0
3.6±0.2
6.0 MAX. 12.7 MIN.
5.9 MIN.
15.5 MAX.
3.0±0.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
2.8±0.2
0.5±0.2
1.3±0.2
4.8 MAX.
1.3±0.2
0.75±0.1
2.542.54
Gate
Drain
Dody
Diode
Source
Gate Protection
Diode
PACKAGE DIMENSIONS
inmillimeters