2SK2925L
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：53.81KB，共10页
Sponsor by e络盟器件资料摘要：
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-549C (Z)
4th. Edition
Jun 1998
Features
• Low on-resistance
R
DS
=0.060 W typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-549C (Z)
4th. Edition
Jun 1998
Features
• Low on-resistance
R
DS
=0.060 W typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S