2SK2922
Silicon N Channel MOS FET
UHF Power Amplifier
ADE-208-675(Z)
1st. Edition
Aug. 1998
Features
• High power output, High gain, High efficiency
PG = 8.0dB, Pout = 31dBm, h D = 57 %min. (f = 836.5MHz)
• Compact package capable of surface mounting
Outline
1
2
3
4
UPAK
1. Gate
2. Source
3. Drain
4. Source
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.