2SK2919
器件描述：Ultrahigh-Speed Switching Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：106.48KB，共4页
Sponsor by e络盟器件资料摘要：
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6121
2SK2919
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21400TS (KOTO) TA-2283 No.6121–1/4
6.2
7.8
8.2
0.20.4
4.2
1.0 1.0
5.08
2.542.54
8.4
10.0
1.2
0.3
0.6
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
1 2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2128
[2SK2919]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· On-chip high-speed diode (t
rr
=100ns).
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
Note ) Be careful in handling the 2SK2919 because it has no protection diode between Gate-to-Source. Continued on next page.
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applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6121
2SK2919
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21400TS (KOTO) TA-2283 No.6121–1/4
6.2
7.8
8.2
0.20.4
4.2
1.0 1.0
5.08
2.542.54
8.4
10.0
1.2
0.3
0.6
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
1 2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2128
[2SK2919]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· On-chip high-speed diode (t
rr
=100ns).
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
Note ) Be careful in handling the 2SK2919 because it has no protection diode between Gate-to-Source. Continued on next page.
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
SSD
006V
egatloVecruoS-ot-etaGV
SSG
03±V
)CD(tnerruCniarDI
D
2A
)esluP(tnerruCniar
PD
8A
noitapissiDrewoPelbawollAP
D
53W
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Tc=25 C
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
egatloVnwodkaerBecruoS-ot-niarDV
SSD)RB(
I
D
V,Am01=
SG
0=006V
tnerruCniarDegatloVetaG-oreZI
SSD
V
SD
V,V084=
SG
0 .1Am
tnerruCegakaeLecruoS-ot-etaGI
SSG
V
SG
V,V03±=
SD
0 01±An
egatloVffotuCV
)ffo(SG
V
SD
I,V01=
D
Am1 .20.3V
ecnattimdArefsnarTdrawroF|sfy|V
SD
I,V01=
D
A1=8.05.1S
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
)no(SD
V
SG
I,V01=
D
A1=2.33.4 W
ecnaticapaCtupnIssiCV
SD
zHM1=f,V02=004Fp
ecnaticapaCtuptuOssoCV
SD
zHM1=f,V02=55Fp
ecnaticapaCrefsnarTesreveRssrCV
SD
zHM1=f,V02 1Fp