2SK2897-01 N-channel MOS-FET
FAP-IIIB Series 60V 0,02Ω ±45A 40W
> Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 60 V
Continous Drain Current I D ±45 A
Pulsed Drain Current I D(puls) ±185 A
Gate-Source-Voltage V GS ±20 V
Maximum Avalanche Energy E AV 461.9 mJ*
Max. Power Dissipation P D 40 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
L=0.304mH,Vcc=24V
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage BV DSS I D =1mA V GS =0V 60 V
Gate Threshhold Voltage V GS(th) I D =1mA V DS= V GS 1,0 1,5 2,0 V
Zero Gate Voltage Drain Current I DSS V DS =60V T ch =25°C 10 500 µA
V GS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±20V V DS =0V 10 100 nA
Drain Source On-State Resistance R DS(on) I D =22,5A V GS =4V 15 20 m Ω
I D =22,5A V GS =10V 10 12 m Ω
Forward Transconductance g fs I D =22,5A V DS =25V 15 35 S
Input Capacitance C iss V DS =25V 2900 4350 pF
Output Capacitance C oss V GS =0V 930 1400 pF
Reverse Transfer Capacitance C rss 260 390 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =30V 13 30 ns
t r 35 50 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) 190 290 ns
t f R GS =10 Ω 75 140 ns
Avalanche Capability I AV L = 100µH T ch =25°C 45 A
Diode Forward On-Voltage V SD I F =45A V GS =0V T ch =25°C 0,95 1,43 V
Reverse Recovery Time t rr I F =45A V GS =0V 55 ns
Reverse Recovery Charge Q rr -dI /d t =100A/µs T ch =25°C 0,10 µC
- Thermal Characteristics
Item Symbol Min. Typ. Max. Unit
Thermal Resistance R th(ch-c) channel to case 3,125 °C/W
R th(ch-a) channel to ambient 62,5 °C/W
V GS =10V
I D =45A
f=1MHz