2SK2899-01R N-channel MOS-FET
FAP-IIIB Series 60V 6,5m Ω ±100A 125W
> Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 60 V
Continous Drain Current I D ±100 A
Pulsed Drain Current I D(puls) ±400 A
Gate-Source-Voltage V GS ±20 V
Maximum Avalanche Energy E AV 1268.3 mJ*
Max. Power Dissipation P D 125 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
L=0.169mH,Vcc=24V
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage BV DSS I D =1mA V GS =0V 60 V
Gate Threshhold Voltage V GS(th) I D =1mA V DS= V GS 1,0 1,5 2,0 V
Zero Gate Voltage Drain Current I DSS V DS =60V T ch =25°C 10 500 µA
V GS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±20V V DS =0V 10 100 nA
Drain Source On-State Resistance R DS(on) I D =50A V GS =4V 7,0 11,0 m Ω
I D =50A V GS =10V 5,0 6,5 m Ω
Forward Transconductance g fs I D =50A V DS =25V 40 80 S
Input Capacitance C iss V DS =25V 6700 10050 pF
Output Capacitance C oss V GS =0V 2100 3150 pF
Reverse Transfer Capacitance C rss 570 860 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =30V 20 30 ns
t r 160 300 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) 410 620 ns
t f R GS =10 Ω 330 500 ns
Avalanche Capability I AV L = 100µH T ch =25°C 100 A
Diode Forward On-Voltage V SD I F =100A V GS =0V T ch =25°C 1,0 1,5 V
Reverse Recovery Time t rr I F =50A V GS =0V 85 ns
Reverse Recovery Charge Q rr -dI /d t =100A/µs T ch =25°C 0,21 µC
- Thermal Characteristics
Item Symbol Min. Typ. Max. Unit
Thermal Resistance R th(ch-c) channel to case 1,0 °C/W
R th(ch-a) channel to ambient 30,0 °C/W
V GS =10V
I D =100A
f=1MHz