2SK2896-01 L ,S
N-channel MOS-FET
FAP-IIIB Series 60V
12m Ω
±45A 60W
> Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
60 V
Continous Drain Current I
D
±45 A
Pulsed Drain Current I
D(puls)
±180 A
Gate-Source-Voltage V
GS
±20 V
Maximum Avalanche Energy E
AV
461.9 mJ*
Max. Power Dissipation P
D
60 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
L=0.304mH,Vcc=24V
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage BV
DSS
I
D
=1mA V
GS
=0V 60 V
Gate Threshhold Voltage V
GS(th)
I
D
=1mA V
DS=
V
GS
1,0 1,5 2,0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=60V T
ch
=25°C 10 500 µA
V
GS
=0V T
ch
=125°C 0,2 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=±20V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=22,5A V
GS
=4V 15 20
m Ω
I
D
=22,5A V
GS
=10V 10 12
m Ω
Forward Transconductance g
fs
I
D
=22,5A V
DS
=25V 15 35 S
Input Capacitance C
iss
V
DS
=25V 2900 4350 pF
Output Capacitance C
oss
V
GS
=0V 930 1400 pF
Reverse Transfer Capacitance C
rss
260 390 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=30V 13 30 ns
t
r
35 50 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
190 290 ns
t
f
R
GS
=10 Ω 75 140 ns
Avalanche Capability I
AV
L = 100µH T
ch
=25°C 45 A
Diode Forward On-Voltage V
SD
I
F
=45A V
GS
=0V T
ch
=25°C 0,95 1,43 V
Reverse Recovery Time t
rr
I
F
=45A V
GS
=0V 55 ns
Reverse Recovery Charge Q
rr
-dI /d t =100A/µs T
ch
=25°C 0,10 µC
- Thermal Characteristics
Item Symbol Min. Typ. Max. Unit
Thermal Resistance R
th(ch-c)
channel to case 2,08 °C/ W
R
th(ch-a)
channel to ambient 125,0 °C/ W
V
GS
=10V
I
D
=45A
f=1MHz