©

1998,1999
MOS FIELD EFFECT TRANSISTOR
2SK2857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
Document No. D11648EJ2V0DS00 (2nd edition)
Date Published March 1999 NS CP (K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
PACKAGE DRAWING (Unit : mm)
1
2
3
4.5±0.1
1.6±0.2
0.8MIN
.
2.5±0.1
4.0±0.25
0.420.42
±0.06
±0.06
±0.06
1.5
3.0
1.5±0.1
0.41
+0.03
-0.05
0.47
DESCRIPTION
The 2SK2857 is a switching device which can be driven directly
by a 5V power source.
The 2SK2857 features a low on-state resistance and excellent
Switching Characteristics, and is suitable for applications such as
actuator driver.
FEATURES
• Can be driven by a 5V power source.
• Low On-state resistance :
RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A)
RDS(on)2 = 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±4 A
Drain Current (pulse)
Note1
ID(pulse) ±16 A
Total Power Dissipation
Note2
PT 2W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic board of 16 cm
2
× 0.7 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Gate
Drain
Electrode
Connection
1.Souce
2.Drain
3.Gate
The mark  shows major revised points.
Marking : NX