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©

1996, 1999
MOS FIELD EFFECT TRANSISTOR
2SK2858
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D11706EJ2V0DS00 (2nd edition)
Date Published August 1999 NS CP(K)
Printed in Japan
The mark a35 shows major revised points.
DESCRIPTION
The 2SK2858 is a switching device which can be driven directly by a
2.5-V power source.
The 2SK2858 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5-V power source
• Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK2858 SC-70(SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±0.1 A
Drain Current (pulse)
Note
ID(pulse) ±0.4 A
Total Power Dissipation PT 150 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Note PW ≤ 10 µs, Duty Cycle ≤ 1 %
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
2.1 ± 0.1
1.25 ± 0.1
0.65
0.3
0.65
2.0 ± 0.2
0.9 ± 0.1
0 to 1.1
0.15
+0.1 –0.05
2
1
3
+0.1 –0
0.3
+0.1 –0
0.3
Marking
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Marking: G24
Gate
Drain
Electrode
Connection
1.Source
2.Gate
3.Drain
a35