2SK2851
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：50.28KB，共10页
Sponsor by e络盟器件资料摘要：
2SK2851
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-478
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.055W typ. (at V
GS
= 10 V, I
D
= 2.5 A)
• 4V gate drive devices.
• Large current capacitance
I
D
= 5 A
Outline
TO-92MOD.
1. Source
2. Drain
3. Gate
3
2
1
D
G
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-478
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.055W typ. (at V
GS
= 10 V, I
D
= 2.5 A)
• 4V gate drive devices.
• Large current capacitance
I
D
= 5 A
Outline
TO-92MOD.
1. Source
2. Drain
3. Gate
3
2
1
D
G
S