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©

1998
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D11273EJ2V0DS00 (2nd edition)
Date Published April 1999 NS CP(K)
Printed in Japan
The mark  shows major revised points.
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super Low On-State Resistance
RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A)
RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A)
• Low Ciss : Ciss = 7200 pF (TYP.)
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V
Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, –10 V
Drain Current (DC) ID(DC) ±70 A
Drain Current (Pulse)
Note1
ID(pulse) ±280 A
Total Power Dissipation (TC = 25°C) PT 100 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to + 150 °C
Single Avalanche Current
Note2
IAS 70 A
Single Avalanche Energy
Note2
EAS 490 mJ
Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RA = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case Rth(ch-C) 1.25 °C/W
Channel to Ambient Rth(ch-A) 83.3 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK2826 TO-220AB
2SK2826-S TO-262
2SK2826-ZJ TO-263