2SK2802
器件描述：Silicon N Channel MOS FET Low Frequency Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：40.88KB，共8页
Sponsor by e络盟器件资料摘要：
2SK2802
Silicon N Channel MOS FET
Low Frequency Power Switching
ADE-208-537C (Z)
4th. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0. 2W typ. (V
GS
= 4 V, I
D
= 100 mA)
• 2.5V gate drive devices.
• Small package (MPAK)
Outline
1
2
3
1. Source
2. Gate
3. Drain
MPAK
D
S
G
Silicon N Channel MOS FET
Low Frequency Power Switching
ADE-208-537C (Z)
4th. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0. 2W typ. (V
GS
= 4 V, I
D
= 100 mA)
• 2.5V gate drive devices.
• Small package (MPAK)
Outline
1
2
3
1. Source
2. Gate
3. Drain
MPAK
D
S
G