2SK2800
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：52.18KB，共10页
Sponsor by e络盟器件资料摘要：
2SK2800
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-513G (Z)
8th. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 15 mW typ.
• High speed switching
• Low drive current
• 4V gate drive device can be driven from 5V source
Outline
TO–220AB
1
2
3
1. Gate
2. Drain (Flange)
3. Source
D
G
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-513G (Z)
8th. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 15 mW typ.
• High speed switching
• Low drive current
• 4V gate drive device can be driven from 5V source
Outline
TO–220AB
1
2
3
1. Gate
2. Drain (Flange)
3. Source
D
G
S