2SK2779
器件描述:MOSFET
文件大小:35.69KB,共1页
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器件资料摘要:
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 100
V(BR) DSS 100 V ID = 100µA, VGS = 0V
V
VGSS ±20
IGSS ±100 nA VGS = ±20V
V
ID ±20
IDSS 100 µAVDS = 100V, VGS = 0V
A
ID (pulse) ±80
(Ta = 25ºC) (Ta = 25ºC)
VTH 1.0 2.0 V VDS = 10V, ID = 250µA
A
PD 35 (Tc = 25ºC)
Re (yfs) 12 20 S VDS = 10V, ID = 10A
W
EAS 200
RDS (on)
60 80
1.5
mΩ
75 95 mΩ
VGS = 10V, ID = 10A
VGS = 4V, ID = 10A
ISD = 20A, VGS = 0V
mJ
Tch 150
Ciss 1630 pF
VDS = 10V, f = 1.0MHz,
VGS = 0V
ºC
IAS 20 A
Tstg –55 to +150
Coss 480 pF
Crss 180 pF
ºC
td (on) 20 ns
tr
td (off)
tf
VSD
90 ns
120 ns
55 ns
1.0 V
Symbol Unit Conditions
Ratings
typ maxmin
40
*
2
*
1
010
20
5
0
15
10
2468
3.5V
4V
3V
VGS = 4V
VGS = 10V
0
0
201510
40
20
60
80
–50
0
0 50 100 150
50
100
150
251020
0
20
15
10
5
VDS = 10V
25ºC
125ºC
012 34
0
1.0
0.5
1.5
2.5
TC = –55ºC
10V
5
0.05
0.5
0.1 0.5 1
1
50
10
5
20105
2.0
VGS = 2V
25ºC
125ºC
VDS = 10V
TC = –55ºC
ID = 10A
ID = 10A
VGS = 10V
VGS = 4V
0 1020304050
50
100
500
5000
1000
Ciss
Coss
Crss
VGS = 0V
f = 1MHz
0
0 0.5 1.0 1.5
20
15
10
5
5V
VGS = 0V
0.5 1 5 10 50 200100
0.1
0.5
1
5
100
50
10
ID (pulse) max
ID max
100
µ
s
DC OPERATION
R
DS (ON)
L
IM
IT
E
D
1
m
s
1
0
m
s
ID = 20A
0
10
20
30
40
0 50 100 150
Without heatsink
With infinite heatsink
2.5V
2SK2779
External dimensions 1 ...... FM20
*
1: PW 100µs, duty cycle 1%
*
2: VDD = 25V, L = 750µH, IL = 20A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 10A, VDD 50V,
RL = 5Ω, VGS = 10V,
See Figure 2 on Page 5.
(Tc=25ºC)
R
DS
(ON)
(m
Ω
) R
DS
(ON)
(m
Ω
)
Re
(yfs)
(S)
Capacitance (pF)
Ta (ºC)
V
DS
(V)
VDS — ID Characteristics
ID — Re (yfs) Characteristics
VDS — Capacitance Characteristics VSD — IDR Characteristics Ta — PD CharacteristicsSafe Operating Area
VGS — VDS Characteristics TC — RDS (ON) Characteristics
VGS — ID Characteristics ID — RDS (ON) Characteristics
VDS (V)VDS (V) VSD (V)
I
DR
(A)
I
D
(A)
P
D
(W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
I
D
(A)
I
D
(A)