2SK2775
器件描述：Ultrahigh-Speed Switching Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：40.37KB，共4页
Sponsor by e络盟器件资料摘要：
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6392
2SK2775
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60800TS (KOTO) TA-2760 No.6392–1/4
6.2
7.8
8.2
0.20.4
4.2
1.0 1.0
5.08
2.542.54
8.4
10.0
1.2
0.3
0.6
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
1 2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2128
[2SK2775]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
· Enables simplified fabrication, high-density mount-
ing, and miniaturization in end products due to the
surface mountable package.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
(Bottom view)
Continued on next page.
Tc=25 C
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ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
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PW£ 10m s, duty cycle£ 1%
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6392
2SK2775
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60800TS (KOTO) TA-2760 No.6392–1/4
6.2
7.8
8.2
0.20.4
4.2
1.0 1.0
5.08
2.542.54
8.4
10.0
1.2
0.3
0.6
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
1 2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2128
[2SK2775]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
· Enables simplified fabrication, high-density mount-
ing, and miniaturization in end products due to the
surface mountable package.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
(Bottom view)
Continued on next page.
Tc=25 C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
SSD
001V
egatloVecruoS-ot-etaGV
SSG
02±V
)CD(tnerruCniarDI
D
52A
)esluP(tnerruCniar
PD
001A
noitapissiDrewoPelbawollAP
D
04W
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
egatloVnwodkaerBecruoS-ot-niarDV
SSD)RB(
I
D
V,Am1=
SG
0=001V
egatloVnwodkaerBecruoS-ot-etaGV
SSG)RB(
I
G
V,Aµ001±=
SG
0 2±V
tnerruCniarDegatloVetaG-oreZI
SSD
V
SD
V,V001=
SG
0 01Aµ
tnerruCegakaeLecruoS-ot-etaGI
SSG
V
SG
V,V61±=
SD
0 1±Aµ
egatloVffotuCV
)ffo(SG
V
SD
I,V01=
D
Am1 .10.2V
ecnattimdArefsnarTdrawroF|sfy|V
SD
I,V01=
D
A21=515.42S
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SD
1)no(I
D
V,V21=
SG
V01=0608mW
R
SD
2)no(I
D
V,V21=
SG
V4 8011mW
PW£ 10m s, duty cycle£ 1%