1
Silicon Junction FETs (Small Signal)
unit: mm
2SK2751
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For pyroelectric sensor
n Features
l Low noise-figure (NF)
l High gate to drain voltage V
GDO
l Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
n Electrical Characteristics (Ta = 25 ± 3°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
I
DSS
I
GSS
V
GDS
V
GSC
| Y
fs
|
C
iss
C
oss
C
rss
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= - 20V, V
DS
= 0
I
G
= - 100m A, V
DS
= 0
V
DS
= 10V, I
D
= 1m A
V
DS
= 10V, I
D
= 1m A, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
min
1.4
- 40
2.5
max
4.7
- 1
- 3.5
Unit
mA
nA
V
V
mS
pF
pF
pF
Note: The test method to comply with JISC7030, Field effect transistor test method.
typ
5
1
1
1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini Type Package (3-pin)
Marking Symbol: HS
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.95
0.95
1.9±0.2
0.4
+0.1 –0.05
1.1
+0.2 –0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1 –0.06
1.45
0.1 to 0.3
2.9
+0.2 –0.05
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
- 40
10
2
200
150
- 55 to +150
Unit
V
mA
mA
mW
°C
°C