2SK2764-01R
器件资料摘要：
2SK2764-01R
N-channel MOS-FET
FAP-IIS Series 800V 4Ω 4A 80W
>Features > Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V GS = ± 30V Guarantee
- Repetitive Avalanche Rated
>Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
>Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
800 V
Continous Drain Current I
D
4 A
Pulsed Drain Current I
D(puls)
16 A
Gate-Source-Voltage V
GS
±30 V
Repetitive or Non-Repetitive (T
ch
≤ 150°C) I AR 4 A
Avalanche Energy E
AS
254 mJ
Max. Power Dissipation P
D
80 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 800 V
Gate Threshhold Voltage V
GS(th)
I
D
=1m A V
DS=
V
GS
3,5 4,0 4,5 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=800V T
ch
=25°C 10 500 µA
V
GS
=0V T
ch
=125°C 0,2 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=±30V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=2A V
GS
=10V 3,19 4,0 Ω
Forward Transconductance g
fs
I
D
=2A V
DS
=25V 2 S
Input Capacitance C
iss
V
DS
=25V 450 pF
Output Capacitance C
oss
V
GS
=0V 75 pF
Reverse Transfer Capacitance C
rss
f=1MHz 40 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=600V 20 ns
t
r
I
D
=4A 40 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 50 ns
t
f R GS =10 Ω
25 ns
Avalanche Capability I
AV
L = 100µH T
ch
=25°C 4 A
Diode Forward On-Voltage V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C 1,0 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 450 ns
Reverse Recovery Charge Q
rr
-dI
F
/d t =100A/µs T
ch
=25°C 3 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 30 °C/W
R
th(ch-c)
channel to case 1,56 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
FAP-IIS Series 800V 4Ω 4A 80W
>Features > Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V GS = ± 30V Guarantee
- Repetitive Avalanche Rated
>Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
>Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
800 V
Continous Drain Current I
D
4 A
Pulsed Drain Current I
D(puls)
16 A
Gate-Source-Voltage V
GS
±30 V
Repetitive or Non-Repetitive (T
ch
≤ 150°C) I AR 4 A
Avalanche Energy E
AS
254 mJ
Max. Power Dissipation P
D
80 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 800 V
Gate Threshhold Voltage V
GS(th)
I
D
=1m A V
DS=
V
GS
3,5 4,0 4,5 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=800V T
ch
=25°C 10 500 µA
V
GS
=0V T
ch
=125°C 0,2 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=±30V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=2A V
GS
=10V 3,19 4,0 Ω
Forward Transconductance g
fs
I
D
=2A V
DS
=25V 2 S
Input Capacitance C
iss
V
DS
=25V 450 pF
Output Capacitance C
oss
V
GS
=0V 75 pF
Reverse Transfer Capacitance C
rss
f=1MHz 40 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=600V 20 ns
t
r
I
D
=4A 40 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 50 ns
t
f R GS =10 Ω
25 ns
Avalanche Capability I
AV
L = 100µH T
ch
=25°C 4 A
Diode Forward On-Voltage V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C 1,0 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 450 ns
Reverse Recovery Charge Q
rr
-dI
F
/d t =100A/µs T
ch
=25°C 3 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 30 °C/W
R
th(ch-c)
channel to case 1,56 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98