© 1996
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SK2724
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A)
• Low Ciss Ciss =1 200 pF Typ.
• Built-in G-S Protection Diode
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±35 A
Drain Current (Pulse)* ID(pulse) ±140 A
Total Power Dissipation (TA = 25 ˚C) PT 2.0 W
Total Power Dissipation (TC = 25 ˚C) PT 30 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
* PW ≤ 10 µs, duty cycle ≤ 1 %
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may
be applied to this device.
Document No. D10515EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in millimeter)
10.0 ±0.3
3.2 ±0.2
15.0 ±0.3
3 ±0.1
4 ±0.2
12.0 ±0.2
13.5 MIN.
1.3 ±0.20.7 ±0.1
1.5 ±0.2
2.542.54
123
1.
2.
3.
Gate
Drain
Source
2.5 ±0.1
0.65 ±0.1
2.7 ±0.2
4.5 ±0.2
MP-45F (ISOLATED TO-220)
Drain
Gate
Gate Protection
Diode Source
Body
Diode
The information in this document is subject to change without notice.
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE