2SK2735
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：39.5KB，共7页
Sponsor by e络盟器件资料摘要：
2SK2735(L), 2SK2735(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-543
1st. Edition
Features
• Low on-resistance
R
DS
= 20 mW typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-543
1st. Edition
Features
• Low on-resistance
R
DS
= 20 mW typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S